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| VISHAY TEKS5400 Vishay Semiconductors Silicon Photodetector with Logic Output Description TEKS5400 is a high sensitive photo Schmitt Trigger in a sideview molded plastic package with spherical lens. It is designed with an infrared filter to spectrally match to GaAs IR emitters ( = 950 nm). The photodetector is case compatible to the TSKS5400 GaAs IR emitting diode, allowing the user to assemble his own optical sensor. 14355 Features * * * * * * Very high photo sensitivity Supply voltage range 4.5 to 16 V Low current consumption (2 mA) Side view plastic package with lens Angle of half sensitivity = 30 TTL and CMOS compatible * * * * Open collector output Output signal inverted (active `low") Case compatible with TSKS5400 Lead-free device Parts Table Part TEKS5400-FSZ TEKS5400-FGZ Type differentiation 1.27 mm Pin distance (lead to lead) 2.00 mm Pin distance (lead to lead) Ordering code TEKS5400-FSZ TEKS5400-FGZ Remarks Height of taping 27 mm Height of taping 27 mm Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Supply voltage Output current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature t 5 s, 2 mm from body Test condition Symbol VS1 IO PV Tj Tamb Tstg Tsd Value 18 20 100 100 - 25 to + 85 - 40 to + 100 260 Unit V mA mW C C C C Handling Precautions Caution: Connect a capacitor C of 100 nF between VS1 and ground! Document Number 83779 Rev. 2.0, 02-Apr-04 www.vishay.com 1 TEKS5400 Vishay Semiconductors Basic Characteristics Tamb = 25 C, unless otherwise specified Parameter Supply voltage Supply current Irradiance for threshold "On" Hysteresis Angle of half sensitivity Wavelength of peak sensitivity Range of Spectral Bandwidth Output voltage High level output current IOL = 16 mA, VS1 = 5 V, Ee Eon VS1 = VS2 = 16 V, IF = 0 VS1 = 16 V = 950 nm, VS1 = 5 V VS1 = 5 V Test condition Symbol VS1/VS2 IS1 Eeon Eeoff/Eeon p 0.5 VOL IOH 25 Min 4.5 2 50 80 30 920 600 to 1020 0.2 0.4 1 Typ. Max 16 5 85 VISHAY Unit V mA W/cm2 % nm nm V A Switching Characteristics Tamb = 25 C, unless otherwise specified Parameter Rise time Fall time Turn-on time Turn-off time Cut off frequency Test condition VS1 = VS2 = 5 V, RL = 1 k, Ee = 3Eeon, = 950 nm VS1 = VS2 = 5 V, RL = 1 k, Ee = 3Eeon, = 950 nm VS1 = VS2 = 5 V, RL = 1 k, Ee = 3Eeon, = 950 nm VS1 = VS2 = 5 V, RL = 1 k, Ee = 3Eeon, = 950 nm VS1 = VS2 = 5 V, RL = 1 k, Ee = 3Eeon, = 950 nm Symbol tr tf ton toff fsw Typ. 100 20 1.5 3.0 200 Unit ns ns s s kHz 95 10819 VS1 0 IF IS1 VS2 RL IO VO IF o Channel I ton 50% toff 90% RG = 50W tp IR-Diode = 0.01 T tp = 50 ms Channel I Oscilloscope VO RL y 1 MW CL x 20 pF 50 W 15180 Channel II o Channel II 10% tf tr Fig. 2 Pulse Diagram Fig. 1 Test Circuit www.vishay.com 2 Document Number 83779 Rev. 2.0, 02-Apr-04 VISHAY Typical Characteristics (Tamb = 25 C unless otherwise specified) 125 P V - Power Dissipation ( mW ) TEKS5400 Vishay Semiconductors 100 R thJA 75 50 25 0 0 20 40 60 80 100 14845 Tamb - Ambient Temperature ( C ) 14352 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -45 -30 -15 E e on rel - Relative Trigger Irradiation VS = 5 V = 950 nm 0 15 30 45 60 75 90 Tamb - Ambient Temperature ( C ) Fig. 3 Power Dissipation vs. Ambient Temperature Fig. 6 Rel. Trigger Irradiation vs. Ambient Temperature 0 1.8 VS = 5 V 1.7 i R L = 10 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -45 -30 -15 0 10 20 30 I Srel - Relative Supply Current Srel - Relative Sensitivity 1.0 0.9 0.8 0.7 0.6 40 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 15 30 45 60 75 90 14353 14350 Tamb - Ambient Temperature ( C ) Fig. 4 Rel. Supply Current vs. Ambient Temperature Fig. 7 Relative Radiant Sensitivity vs. Angular Displacement 0.30 VOL - Output Voltage ( mV ) 0.28 0.26 0.24 0.22 0.20 0.18 0.16 VS = 5 V RL = 1 k 0.14 -45 -30 -15 14351 0 15 30 45 60 75 90 Tamb - Ambient Temperature ( C ) Fig. 5 Output Voltage vs. Ambient Temperature Document Number 83779 Rev. 2.0, 02-Apr-04 www.vishay.com 3 TEKS5400 Vishay Semiconductors Package Dimensions in mm VISHAY 14346 www.vishay.com 4 Document Number 83779 Rev. 2.0, 02-Apr-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. TEKS5400 Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83779 Rev. 2.0, 02-Apr-04 www.vishay.com 5 |
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